Vto In Mosfet

20e-12, cjo = 1. 4) It is particularly important to realize that all of the equations above are for the de- vice only! They do not change with each network configuration so long as the device is in the active region. and M 3 are 100 times minimum size OS 222 p V VTO n VTO p n n n 2 μ σ A+A W L μ ⎡⎤ ≅ ⎢⎥ ⎣⎦ a) OS 2 2 2 V 2⎢⎥ 21. INVERTER CIRCUITS. 7 and r ox = 3. Discrepancy between simulated and real performance can send a product into costly iterative debugging cycles. SV,k 0 0 0 2 /" 6 Vgs (Voits) 2. 64e-6 + NSUB=1E17 TOX=20n) where M1 is one specific transistor in the circuit, while the transistor model "NFET" uses the built-in model NFET to specify the process and technology related parameters of the MOSFET. From the PSpice results in Fig. product type: mosfet *$.   These parameters best match text circuits when the simulations are demonstrated. MODEL RBREAKMOD RES (TC1 =1. All other parameters of the MOSFETs are in the default values. If not input, it is calculated by UO * COX. For driving enhancement mode JFETs having a gate grid array structure and a pinch-off voltage greater than 0. From the (model statement: (model MOSn NMOS( Vto=1V. Assuming operation in the saturation region, what va. Lessons In Electric Circuits -- Volume III Chapter 6 INSULATED-GATE FIELD-EFFECT TRANSISTORS construction, the IGFET is sometimes referred to as a MOSFET. If using a 3rd party MOSFET model results in mosfst slow simulation performance, it is probably because the model is defined using the. * MOSFET VDMOS Models with ksubthres *10N20-Tjp VDMOS with subthreshold (c) Ian Hegglun 21 May 2015. For enhancement-type MOSFETs, the following equation is applicable: ID ϭ k(VGS Ϫ VT)2 (6. For JFETs or depletion MOSFETs, the transistor is normally on, meaning normally conducting current from drain to source. 9 o/TOX where r si = 11. Make sure you use tox in meters to end up with Cox with units F/m^2. model MC14007N NMOS LEVEL=3 W- -350u L=10u VTO= 1. Analog Electronics: Pinch-off Voltage Topics Covered: 1. 335) and used * in the SPICE Examples of the textbook. Complementary MOSFET (CMOS) technology is widely used today to form circuits in numerous and varied applications. It therefore follows that for MOSFET Q1:. MODEL RBREAKMOD RES (TC1 =1. The selects the parts 1. 0 Channel length modulation parameter λ LAMBDA V-1 0. NMOS consist of p type substrate and n type channel. Analysis of MOSFET circuits is based on three possible operating modes: cutoff, triode (aka linear), and saturation. ified Lightly Doped Drain Structure for VLSI MOSFET's Abstract-A new n-MOS LDD-like device structure (the J-MOS transistor) is proposed. 7;Nsub是衬底(阱)的杂质浓度。γ越大,表示衬底偏置效应越强。. Note Level 1, 2, 3 and 17 MOSFETs are described in this section. MOSfet label nd ng ns nb mname {args}. 2N5457 - General Purpose JFETs Author: s2190c Subject: N Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. 1 INTRODUCTION A field effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts - the source and the drain - where the number of charge carriers in the channel is controlled by a third contact - the gate. Insulated gate field-effect transistors are unipolar devices just like JFETs: that is, the controlled current does not have to cross a PN junction. Assume the drain implant region length is 6µm and the width equals the device width. find the line which gives the value of Vto. In the window that comes up, type in the model parameter values. 1-1 Using Eq. MOSFET device PMOS simulation model definition syntax:. ©2002 Fairchild Semiconductor Corporation IRF530N Rev. KARAKTERISTIK JFET & MOSFET Oleh Sigit Priyambodo, S. LECTURE 14 - THE MOS SWITCH AND MOS DIODE LECTURE ORGANIZATION Outline • MOSFET as a switch • Influence of the switch resistance. Generate this voltage at the output of a two resistor voltage divider having equal resistor values of 10k connected between +15V and ground. In power electronics, MOSFET transistors are the most usual. To investigate basic MOSFET amplifiers. iD: FN_S: This version includes the possibility of velocity saturation, but Vb is set at very large for now. , the DC value) will be denoted by the capital letters with. See the complete profile on LinkedIn and discover Son’s connections and jobs at similar companies. Department of Energy (DOE). The P- Channel MOSFET has a P- Channel region between source and drain. 04, GAMMA=0. 00 Oct 1, 1999 Abstract An empirical sub-circuit was implemented in PSPICE® and is presented. (a)Experimental characteristics of a MOSFET with L = 2. N-Channel MOSFET Circuit Schematic. This is normally set as a model parameter in your transistor models - it's often called something like vto (e. model 4007NMOS KP=O. This is a JFET with no model. 5E-10 CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10 + MJ=0. 19th February 2006, 04:34 #3. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance. Making statements based on opinion; back them up with references or personal experience. With VGS = VDS, VDS is always less than VGS – Vto. * MOSFET VDMOS Models with ksubthres * * *10N20-Tjp VDMOS with subthreshold (c) Ian Hegglun 21 May 2015. SUM75N06 datasheet Original SUM75N06 Model. Created Date: 2/19/2010 4:20:53 PM. MODEL B4 NMOS VTO=1. MOSFET models have been developed from the basic modeling of thin-film VTO Quadratic equation gate threshold voltage V -2. Lecture 09 - Large Signal MOSFET Model (5/14/18) Page 09-8 CMOS Analog Circuit Design © P. 1 Vto is the gate threshold voltage Vgs and is a design parameter of the part. 0-Vto 20-VBus Operation protects loads, minimizes inrush current, and safely. VFB is a flate band voltage. MOSFETs are simulated using the native MOSFET model. Monte Carlo analysis analyzes the effects of errors due to electronic circuit parts. In this article, we will explain in detail the monte carlo analysis(mc) method in LTspice. fairchildsemi. Zoom out and see the bigger picture, or focus in on an unprecedented level of granular data. 5E-8 NSUB=5E16 VTO=2. MOSFET device NMOS simulation model definition syntax:. n In order to predict the circuit frequency response, we need to estimate the circuit capacitance. 5 UO=650 + Rs=10). Level 1 MOSFET model:. model mosfet PMOS( LEVEL=7 VTO=-3. Find the values required for W and R in order to establish a drain current of 0. Although used so extensively, the modeling of the mosfet is not that straightforward, including a lot of pitfalls. model ModName xmos (para) (xmos is either NMOS or PMOS) Some key para are: Parameter Description Units Default VTO Zero-bias threshold voltage KP Transconductance parameter, μ C ox Amps/ E-5 GAMMA Bulk threshold parameter / PHI Surface potential. 4 V Low Input Capacitance: 35 pF Fast Switching Speed: 10 ns Low Input and Output Leakage. The initial conditions are only used for transient analysis. subckt IRF9510 D G S. 015 mA/V VTO = - 2. 0 λ LAMBDA V-1 0. 012 Microelectronics Devices and Circuits Fall 2005 1 Cadence Tutorial (Part One) By Kerwin Johnson Version: 10/24/05 (based on 6. The largest collection of symbols in the network in PDF format. Johns University of Toronto CD4007. Private Message. model mos1 nmos (vto=0. Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits. Notes: SIMetrix supports four types of MOSFET model specified in the model definition. This determines the drain current that flows for a given gate source voltage. At this voltage, the transistor enters the cutoff region. CMOS Inverter Using PSpice. The initial conditions are only used for transient analysis. This mobility equation is the same as MOB=3, except the equation uses VTO instead of vth. The ID current is dependent on Vgs above Vto. In the window that comes up, type in the model parameter values. VGS VGG VS VGS = 3. 6 Kp=60 + Cgdmax=1. Afterwards, connect the J8(TSW-104-07-G-S) pin 1(VCC) to a 3. 50 KP=781u GAMMA=3. Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6 012 Microelectronic Devices and Circuits Spring 200…. Experiment 6 SPICE Modeling of the JFET and MOSFET 4 Fig. 2 SPICE MOS Model The SPICE MOSFET Model is defined in the netlist as. Parameters Vto, Kp, Gamma, Phi, and Lambda determine the dc characteristics of a MOSFET device. , GAMMA willbe computed from NSUB and TOX. You obtain a characteristic Id which is flat and quasi-zero up to a certain value range where it promptly start. model mosfet PMOS( LEVEL=7 VTO=-3. So here, we have VDS = 2. This is the diode depicted in virtually all MOSFET datasheets. To turn on the MOSFET, we must provide a minimum Gate to Source voltage (Vgs Threshold voltage). We will use MOSFETs to design our circuits. This is a slightly odd request - normally a user wouldn't set the threshold voltage themselves as it is part of the model characterization process. model mnmos nmos vto=0. This is the threshold voltage parameter. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. A Non-synchronous Buck dc-dc Converter, high side N-type MOSFET: This is a reasonably simple circuit for a moderate current dc-dc buck converter. 1/L (L in µm). Vto is positive (negative) for enhancement mode and negative (positive) for depletion mode N-channel (P-channel) devices. 4 volts, the range of resistor values is 10 to 200. You need to know what to call the parameters you want to change. Thanks, I was searching using "IRFP" But I guess the "P" refers to "power" and not "p-channel". LTspice: Using the. PHI = x Surface potential. Usually Cox is written as F/ (um)^2. 64e-6 + NSUB=1E17 TOX=20n) where M1 is one specific transistor in the circuit, while the transistor model "NFET" uses the built-in model NFET to specify the process and technology related parameters of the MOSFET. This determines the drain current that flows for a given gate source voltage. However, NSUB should be specified when modeling the back gate bias dependency of Vto. Although DE-MOSFET is useful in special applications, it does not enjoy widespread use. Experiment 6 SPICE Modeling of the JFET and MOSFET 4 Fig. In Enhancement type of MOSFETs, the device remains OFF at zero Gate voltage. In order to fill the gap between the simple Shockley model and the more precise models, a new model, namely, the nth- power law MOSFET model, is proposed in this paper. Levels 1,2, and 3 are the same as the SPICE2. It accurately portrays the vertical DMOS power MOSFET electrical and, for the first time, thermal responses. the MOSFET is either in a lower or high resistive state (ON or OFF, respectively), a high source voltage can be converted to a lower output voltage very efficiently. Modeling JFET IDSS in SPICE Reply to Thread. 2 SPICE MOS Model The SPICE MOSFET Model is defined in the netlist as. You obtain a characteristic Id which is flat and quasi-zero up to a certain value range where it promptly start. 1u M1 1 4 9 9 myMOS1. model mnmos nmos vto=0. function ids = nmos(vds,vgs,KP,W,L,vto) % Function generates the drain-source current values "ids" for % and NMOS Transistor as a function of the drain-source voltage "vds". 5-VTO 20-VINPUT, 3-AOUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFT™) • 100 mW, 4. The standard basis for the MOSFET model is as in the following. 005 +CGSO=2. This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor refers to the ch. Design an NMOS NOR logic gate using the 2N7000 MOSFET the model has Vto = 2. The parameters VTO and KP of each transistor are used for alignment of the model with measured data. Here is an equivalent model:. These parameters are computed by SPICE if process. 0 revision=8 name="ac_source" description="AC. M: MOSFET Syntax Mxxxxxxx nd ng ns nb mname {args} Mxxxxxxx nd ng ns nb mname {width/length} {args}. 5-VTO 28-VINPUT VOLTAGE, 1. model mosfet PMOS( LEVEL=7 VTO=-3. MOSFET I-V characteristics: general consideration The current through the channel is V I R = where V is the DRAIN - SOURCE voltage Here, we are assuming that V << V T (we will see why, later on) The channel resistance, R (W is the device width): s LL R qn aW qn Wμμ ==-+ G Semiconductor The gate length L S D +-V V GS I=μW c i ×(V GS -V T. *MOSFET M1 will inherit *kp=1e-3 phi=0. (The subthreshold region is a fourth mode, but we don't need to worry about that for this article. 8eE-14F/cm q = 1. * Covers the three significant models: BSIM3, Model 9 &, and EKV. What is a pinch? 3. What you "get out of it" depends on how you use it. Chapter 16 Selecting a MOSFET Model Now that you know more about MOSFET models from Chapter 15, “Introducing MOSFET. and M 3 are 100 times minimum size OS 222 p V VTO n VTO p n n n 2 μ σ A+A W L μ ⎡⎤ ≅ ⎢⎥ ⎣⎦ a) OS 2 2 2 V 2⎢⎥ 21. Complementary MOSFET (CMOS) technology is widely used today to form circuits in numerous and varied applications. Choose an appropriate project name and a path. 2 This is the gate voltage at which the FET starts to conduct. 6 LAMBDA Channel-length modulation - CGSO Gate-source overlap capacitance. END netlist device SPICE model the simulator provides 8 MOSFET device models, which differ in the formulation of the I-V characteristic the. But for a mosfet to produce linear amplification, it has to operate in its saturation region, unlike the Bipolar Junction Transistor. Full Member level 2. In power electronics, MOSFET transistors are the most usual. Para realizar el modelamiento del transistor Mosfet en Orcad, Medir las variables de voltajes y corriente en circuitos de utilizar la librera Breakout (Mbreakn) y adicionar datos de Kp, polarizacin de DC. = K ( - )2 (- ) 2 Encontrar los parmetros de Kp, , Vto para transistor Mosfet. The gate-to-source (also drain-to-source in this case) voltages of the MOSFETs can be vari. These device types include analog primitives, independent and controlled sources, and subcircuit calls. 4 Coherence of static and dynamic models All aspects regarding the static, the quasistatic and non-quasistatic dynamic and noise models are all derived in a coher-ent way from a single characteristic, the normalized transconductance-to-current ratio. Free Energy for free independant people +VTO=3. Connect this pin to the source of the upper MOSFET and the drain of the lower MOSFET. subckt IRF9510 D G S. * MOSFET VDMOS Models with ksubthres * * *10N20-Tjp VDMOS with subthreshold (c) Ian Hegglun 21 May 2015. MOSFET capacitances tend to limit the frequency response of circuits. First read the value of V TO from the data sheet. doc 1/5 Jim Stiles The Univ. 9n Cgdmin=50p Cgs=3. In short channel MOSFETs, it is impossible to overcome this effect. For low power and high-frequency analog design, sometimes the EKV model is used. iD: FN_S: This version includes the possibility of velocity saturation, but Vb is set at very large for now. 5E-8 NSUB=5E16 VTO=2. 0-Vto 20-VBus Operation protects loads, minimizes inrush current, and safely • Programmable Fault Current shuts down in the event of a fault. model line is:. 5-VTO 20-VINPUT, 3-AOUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFT™) • 100 mW, 4. A Non-synchronous Buck dc-dc Converter, high side N-type MOSFET: This is a reasonably simple circuit for a moderate current dc-dc buck converter. The input signal can swing to about a volt peak to peak before the circuit becomes problematic. A numeric code that represents the region it is operating in. of Kansas Dept. MODEL MNMOS NMOS VTO=0. When MOB=6 is used, the current ids also is modified as follows: Channel Length Modulation. 1u) Related Information Analog Devices Library my_ModelNAME Arbitrary name that links the instance declaration to a model definition. For more information, see subcircuit2ssc. CMOS offers low power dissipation, relatively high speed, high noise margins in both states, and will operate over a wide range of source and input voltages (provided the source voltage is fixed). The EKV MOSFET Model for Circuit Simulation October, 1998 the EKV MOSFET model structure VTO long-channel threshold voltage V0. Just list it after pin 3. Vgs(th) is the voltage at which the mosfet channel begins to conduct. 0 λ LAMBDA V-1 0. Higher Vto means that to get the same drain current, a higher voltage will be required on the gate, and the converse. SPICE parameters obtained in this way are listed below. MOSFET Model Parameters. When the voltage at the Gate is equal to the voltage at the Source, the resistance between the Drain and Source is at its highest (effectively infinite). NMOS model parameters KP and VTO in the. If iD is to be 12. You can convert SPICE components into Simscape™ equivalents using the SPICE conversion assistant. VDsat: Note that VTO is an extracted parameter. You need to know what to call the parameters you want to change. Potential barrier is controlled by both VGS and VDS. Tox = 4E-9 m from PSpice model of TSMC's 180nm MOSFET process. model line is:. The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. 43 is equal to 14. Now MOSFET's quiescent point or Q point or bias point is defined by the relationship of it's drain current, it's drain to source voltage and it's gate to source voltage. The 2N7000 datasheet is can be be viewed here: 2N7000 MOSFET datasheet. In an IC, the mosfet is a four-terminal device. Then select the jfet on the schematic and select Edit Model in the edit pull down menu. The input signal can swing to about a volt peak to peak before the circuit becomes problematic. Complementary MOSFET (CMOS) technology is widely used today to form circuits in numerous and varied applications. When the MOSFET is in Triode. Next modify the model definition so that model parameter Vto value is read from above PARAM part property Vto. The parameters V TO K P as well as R d have to be specified for proper operation of the mosfet. From the PSpice results in Fig. To change it to 0. MOSFETs in PSPICE. This is a slightly odd request - normally a user wouldn't set the threshold voltage themselves as it is part of the model characterization process. MOSFET device instance declaration syntax: VTO Threshold voltage. Parameters Vto, Kp, Gamma, Phi, and Lambda determine the dc characteristics of a MOSFET device. Enhancement Load NMOS. The voltage of the covered gate determines the. •Rated from -40°Cto 105°C •Lead(Pb)-FreePackaging For fast switching speeds, the UCD7201 output stages use the TrueDrive™ output architecture, which delivers rated current of ±4 A into the gate of a. So, this is the setup for pretty much any N-Channel MOSFET Circuit. Set values for v T, k (=µ nC ox) in Edit/Model/Edit Instance Model after clicking NbreakN3. 335) and used * in the SPICE Examples of the textbook. Vto, Kp, Gamma, Phi, and Lambda determine the DC characteristics of a MOSFET device. A simple MOSFET circuit. 00ohms Diodes Inc. Or, if even one transistor is too many, the following tube-based hybrid could be made. Appendix The SPICE JFET model1 assumes that whenever v GS is above its threshold (pinchoff) value, the JFET behaves according to the following dc equations: i D = BETA [v GS − VTO]2 for v GD [ VTO (1) i D = BETA [2 (v GS − VTO) v DS. 3-Vto 5-V power source to supply the TLC59283 and pin 2 (VLED) to 5 V (higher than VCC) power source to supply for 8 dual MOSFETs. SUBCKT FDS8870 2 1 3 ;rev March 2004Ca 12 8 2. The SPICE Level 1 MOSFET model uses the Meyer capacitance model. Introduction. Notes: SIMetrix supports four types of MOSFET model specified in the model definition. MODEL RBREAKMOD RES (TC1 =1. MOSfet label nd ng ns nb mname {width/length} {args} Purpose. MODEL DMOS NMOS (LEVEL=3 VTO=3. 19th February 2006, 04:34 #3. It includes the stray inductive terms L G, L S and L D. n-channel MOSFET's with Le, below 2 pm suffer from high-field effects that must be overcome to secure reliable 5-V. 4 Coherence of static and dynamic models All aspects regarding the static, the quasistatic and non-quasistatic dynamic and noise models are all derived in a coher-ent way from a single characteristic, the normalized transconductance-to-current ratio. Three level-1 MOSFET transistors are used to model the gain block for the full current range from the sub-threshold region through high current. The screen that you will probably spend the. Use the +6 V power supply for VGG and the +25 V supply for VDD. But I could not find where and how to start the design. Holes reside in the valence band, a level below the conduction band. In this region, Ids responds to Vgs exponentially like a diode, rising a decade for every so many mV (typically 60mV for Si diodes, but 200-300mV for MOSFETs). model Mbreakn NMOS (Vto = 1 Kp = 0. Kp=50uA/V2. According to Tsividis analysis, the dependance on the temperature in strong inversionhas as follows: a temp increase tends to increase the drain current for low currents and vise versa for high current. The model that you will use for the MOSFET is: Id = kp (Vgs – Vto) 2 (1 + lambda*Vds) 2 where, Kp = 0. LEVEL Model type (1, 2, or 3) 1 L Channel length meters DEFL W Channel width meters DEFW LD Lateral diffusion length meters 0 WD Lateral diffusion width meters 0 VTO Zero-bias threshold voltage Volts 0 KP Transconductance Amps/Volts2 2E-5 GAMMA Bulk threshold parameter Volts1/2 0 PHI Surface potential Volts 0. 1 INTRODUCTION A field effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts - the source and the drain - where the number of charge carriers in the channel is controlled by a third contact - the gate. " it will be easier for you to choose which type of models you require for your needs. 036 VGS VTO = 1. You can convert SPICE components into Simscape™ equivalents using the SPICE conversion assistant. 5 V and K = 0. m DEFL WD Lateral diffusion (width). Drain Source Voltage (VDS) is 50V. Turn ON and Turn off time is 20ns each. 4)v DS C = 5. Procedures: 1. TO 220AB Mosfet datasheet, cross reference, ISL9N302AP3 11000pF 110nC, O-220AB 25E5 tube N302AP ISL9N302AP3 Vto-16 47E-1 6e2 tube: 2002 - N306AS. model dbreakmod = ()d. Connect the circuit as shown in the figure, using the Mbreakn MOSFET model. model Nch3 MOSFET Idsmod=3 \ Kp=4e-5 Vto=0. 第一節 增強型MOSFET 之特性與 偏壓 FET 可分為MOSFET 與JFET ,MOSFET 可分為增強型與空乏型。 之夾止飽和電流ID=k×(VGS VGSt) 2。 電郤體的主要分類,除了雙極性接面電郤體(BipolarJunctionTransistor, BJT )之外,還有邃效電郤體(FieldEffectTransistor,FET )。由圖8-1 常見電. 8 µm: Holberg. For a p-channel JFET use the designator PJF instead of NJF and set the parameters VTO and BETA to match the p-channel parameters. The selects the parts 1. Here, VFB denotes the flat-band voltage of the MOSFET. Such a combination gives users the capability to have the proof of concept quickly in PSIM, and then zoom in to study a circuit in detail in SPICE. So here, we have VDS = 2. 7 Lecture 8: MOSFET (1): physics 13 PMOS Transistors: Enhancement-Mode Structure • p-type source and drain regions in an n-type substrate. The main advantage of using MOSFET as load device is that the silicon area occupied by the transistor is smaller than the area occupied by the resistive load. MOSfet label nd ng ns nb mname {width/length} {args} Purpose. 1u M1 1 4 9 9 myMOS1. Bahan Kuliah. The SPICE Level 1 MOSFET model uses the Meyer capacitance model. 1u) Related Information Analog Devices Library my_ModelNAME Arbitrary name that links the instance declaration to a model definition. 5 µm For sub-µm MOSFETs, BSIM = "Berkeley Short-Channel IGFET Model" developed by Profs. To illustrate amplification using a MOSFET 2. The largest collection of symbols in the network in PDF format. 5V and kn’(W/L)=0. JFET while others may be more applicable to the MOSFET, etc. 실제 상용화된 MOSFET이 아닌, 전자회로 등 이론상의 소자를 시뮬레이션 하기 위해서는 MbreakN, MbreakP를 사용해야 합니다. Similarly, the drain (D) can be likened to the collector (C), and the source (S) to the emitter (E). 012 Microelectronics Devices and Circuits Fall 2005 1 Cadence Tutorial (Part One) By Kerwin Johnson Version: 10/24/05 (based on 6. The MOSFET driver simulation models are provided in netlist format. ec ≈ 5 × 104 V/cm for holes, hence velocity saturation for P-channel MOSFET will not become important until L < 0. The various parameters that go into a model will be given or estimated from device physics. 0 revision=8. 5 UO=200 * DC Analysis * Sweep VIN over 15 V range. 0 VGS 2 0 DC 0. These parameters are computed by SPICE if process. The relationship between the input and output voltage can be established by balancing the volt-time of the inductor during both states of Q1. Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits. 2] 2 [0 2 G th D D D G th. For enhancement-type MOSFETs, the following equation is applicable: ID ϭ k(VGS Ϫ VT)2 (6. ) In cutoff, the gate-to-source voltage is not greater than the threshold voltage, and the MOSFET is inactive. model Si4410DY VDMOS(Rd=3m Rs=3m Vto=2. subckt" 声明,并且将 "s" 和 "b" 引脚内部相连。这是一个等效的模型:. B IRF530N 22A, 100V, 0. 4 volts, the range of resistor values is 10 to 200. Use the HP multi-meter to measure the drain current, ID, and the Fluke multi-meters to measure VDS and VGS. データシートに基づくsic mosfetのvdmosモデルの作成 Wolfspeed(CREE)の C3M0280090D , C3M0120090D , C3M0065090D のSPICEモデルは 温度パラメータが入っているため、非線形の振る舞いをします。. Agarwal and J. Functional Pin Description Typical Application Circuit V OUT 2 8 4 6 V C COM P /SD UGATE RT8108x LGATE/ OCSET FB 5 7 BOOT 1 HASE L OUT V IN RS C OUT C BOOT C HF BULK 3. MOSFET DIFFERENTIAL AMPLIFIER (TWO-WEEK LAB) BACKGROUND The MOSFET is by far the most widely used transistor in both digital and analog circuits, and it is the backbone of modern electronics. 0 VBS 3 0 DC -5. LEVEL3_Model is a semi-empirical model derived from [1]. To illustrate amplification using a MOSFET 2. In power electronics, MOSFET transistors are the most usual. The Qucs implementation of the short short channel EKV v2. model dbreakmod = ()d. Levels 1,2, and 3 are the same as the SPICE2. Or, if even one transistor is too many, the following tube-based hybrid could be made. SiC power MOSFET gate oxide breakdown reliability — Current status Abstract: SiC power MOSFET is poised to take off commercially. END (b) The following netlist code maintains vDS constant to determine the transfer characteristic that is plotted by useof Probe as Fig. 7 µm, x0 =0. MOSfet label nd ng ns nb mname {args}. Connect this pin to the source of the upper MOSFET and the drain of the lower MOSFET. Analog design engineers lean heavily on simulation to predict circuit performance. The 10uF above the 10M resistor effectively grounds any unwanted signal appearing from the supply. , the DC value) will be denoted by the capital letters with. Some of the main FET specifications used in datasheets are defined below. tran 100n 200u 0 IOOn. Hello, I am pretty new to using ngspice and I was trying to figure out how to use gSchem's pmos-3. 077 Where can I find models for appropriate MOSFET as shown in diagrams which I *ZETEX ZVP2106A Mosfet Spice Subcircuit Last revision 3/86 *. Make sure you use tox in meters to end up with Cox with units F/m^2. 1p + Cgdo=0. 015 mA/V VTO = - 2. Ignore the sidewall capacitances. The threshold voltage (V T) is a fundamental parameter for MOSFET modeling and characterization , , , , ,. AND9033 Description of the ONSemiconductor MOSFET Model Structure of MOSFET Model GS VTO IDS 0 (eq. The relationship between the input and output voltage can be established by balancing the volt-time of the inductor during both states of Q1. Sort of important. Consequently, the MOSFET models supplied have been made using subcircuits that include additional components to improve simulation accuracy. This tutorial will guide you through the creation and analysis of a simple MOSFET circuit in PSPICE Schematic. Determination of the state of the MOSFET by observing Vgs and Vds, using correct equations for different the region of. Early prediction of poor intrinsic reliability comparing to silicon MOSFET, while theoretically sound, has now proven way too. Mname is the model name. STEP Command to Perform Repeated Analysis. With VGS = VDS, VDS is always less than VGS – Vto. MOSFETs are simulated using the native MOSFET model. However, threshold voltage mismatch (¿Vto) has a two-sided effect on the off-state current. VGS VGG VS VGS = 3. V gs must be pulled below 0 V in order to cut off the channel. A) In PSpice the MbreakN3 FET model parameters can be edited by first selecting the FET. A mosfet boost circuit for electric guitar al Jack Orman. model Mbreakn NMOS (Vto = 1 Kp = 0. MAIN APPLICATIONS AC static switching in appliance control systems Drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater. The 10uF above the 10M resistor effectively grounds any unwanted signal appearing from the supply. curve m1 1 0 0 0 mod1 vammeter 2 1 dc 0 v1 2 0. MOSFET 은 Depletion type 과 Enhancement type 으로 구분할 수 있습니다. Complementary MOSFET Analog Switch (Trasmission Gate). 4-March-04 HO #18: ELEN 251 - MOSFET Models Saha #14 Level 1 MOSFET Model: Summary • Current Eq: • Model Parameters: – VTO = threshold voltage at V B = 0 – KP = process transconductance – GAMMA = body factor – LAMBDA = channel length modulation factor – PHI = 2|φ F| = bulk Fermi-potential. subckt arf448 6 4 1 ciss 3 5 1450p crss 5 2 65p lg 7 6 4 6n m 8 5 3 3 125-050m l=2u w=1. Although DE-MOSFET is useful in special applications, it does not enjoy widespread use. DE375-501N21A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. Or, if even one transistor is too many, the following tube-based hybrid could be made. sym symobl with a simple. subckt fk4b0110 1 2 3 m_m1 a y 2 2 mint d_d1 2 3 dbd d_d2 1 3 dgd d_d3 1 x dzd d_d4 2 x dzd r_r1 2 3 9. * mosfet 을 위주로 설명할거임 * OrCAD Capture CIS-Demo edition 위주로 작성됨 먼 저 피스파이스 시뮬레이션 창을 띄운다음 상단 Accessories 아래있는 빈칸에 'MbreakN3' 를 입력한다. Like the Pass's Zen amplifier, this amplifier uses the bottom N-channel MOSFET's transconductance to do all the major work. model MC14007N NMOS LEVEL=3 W- -350u L=10u VTO= 1. dc vin 0 5 0. Refer to the three circuit diagrams in Figures 7. * Covers the three significant models: BSIM3, Model 9 &, and EKV. BSIM and EKV groups have agreed to collaborate on the long-term development and support of BSIM6 as a world-class open-source MOSFET SPICE model for the international community for years to come. Noun ()(colloquial) A veterinarian or veterinary surgeon. 1u M1 1 4 9 9 myMOS1. spice mosfet 通常的模型格式为: mxxxx d g s b model_name 在一个3个引脚的型号中使用上述模型,你必须使用". Hello to everyone. The drain-source voltage in the equation is 48 ID. 0 revision=8. The current-voltage characteristics of a NMOS transistor are shown in Figure 1b. 7 Lecture 8: MOSFET (1): physics 13 PMOS Transistors: Enhancement-Mode Structure • p-type source and drain regions in an n-type substrate. lambda schematic datasheet, =312n GAMMA=0 IS=1. View device structures and doping profiles at the end of each major processing steps. MODEL DMOS NMOS (LEVEL=3 VTO=3. In power electronics, MOSFET transistors are the most usual. Set values for W and L by double clicking MbreakP3 => Simulate I-V characteristics of PMOS. SPICE provides four MOSFET device models, which differ in the formulation of the I-V characteristic. EXPERIMENT 4 25 February and 17 March MOSFET I-V Characteristics and MOSFET Circuits Note 1: Because of the inter-related nature of the MOS topics, this laboratory set of experiments will extend over two weeks with Spring Break in the middle. (The subthreshold region is a fourth mode, but we don’t need to worry about that for this article. The main advantage of using MOSFET as load device is that the silicon area occupied by the transistor is smaller than the area occupied by the resistive load. 5V 100 50-MOSOFT Level Input VBS 2V VDS 0. model our_nMOSFET nmos (kp=kval Vto=Vval lambda=lval gamma=gval) where kval, Vval, lval, and gval are, respectively, the measured values of k’, Vtn0, λn, and γn. The MOSFET circuit is biased in class A mode by the voltage divider network formed by resistors R1 and R2. Using The Power MOSFET Simulation Models. 2 ΩΩΩΩ PDC = 940 W Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; R GS = 1 M Ω 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 10 A IDM Tc = 25°C, pulse width limited by T JM 60 A IAR Tc = 25°C 10 A EAR Tc = 25°C 30 mJ. 7 KP=322E-6 LAMBDA=0. In this lab, the technique to extract basic parameters are learned. MOSFETのデータシートにはゲート入力電荷量Qgーゲートソース間電圧VGSの特性があります。 この特性は、ゲートソース間電圧VGSの電圧によってゲート入力電荷量Qgが変わることを表す図です。 今回、LTspiceでQg-VGS特性を取得する方法について説明します。 『Qg-VGS特性』の例 まず最初に今回LTspiceで. The bypass capacitor for this pin should be returned to PGND. A new window pop up with the Pspice project type, select "Create a blank project" and click ok. The flow of current is positively charged holes. 二、mosfet 直流電路分析 例3. 1 MOSFET Device Physics and Operation 1. I am using Orcard Capture lite v16. Check the datasheet to see how the switching times have been tested. 7m) The MOSFET's model card specifies which type is intended. The dc characteristics are defined by the parameters VTO and BETA, which determine the variation of drain current with gate voltage, LAMBDA, which determines the output conductance, and IS, the saturation current of the two gate junctions. 6X 10-19[C];εsi是硅的相对介电常数,εsi= 11. Brief Spice Tutorial ECE 3110, University of Utah, Fall 2002 * Spice MOSFET model from Sedra and Smith book: *. A) In PSpice the MbreakN3 FET model parameters can be edited by first selecting the FET. A few changes were made to the original circuit to turn it into a proper RF amplifier. The use of the quadratic I D-V GS relationship for a. 4 kp=14u lambda=1m gamma=. subckt fk4b0110 1 2 3 m_m1 a y 2 2 mint d_d1 2 3 dbd d_d2 1 3 dgd d_d3 1 x dzd d_d4 2 x dzd r_r1 2 3 9. If not input, but NSUB is, it is calculated, otherwise a default value of 0 is used. A negative code indicates the source and. When the voltage at the Gate is equal to the voltage at the Source, the resistance between the Drain and Source is at its highest (effectively infinite). The MOSFET is a core of integrated circuit and it can be designed and fabricated in a single chip because of these very small sizes. The selects the parts 1. 64e-6 + NSUB=1E17 TOX=20n) where M1 is one specific transistor in the circuit, while the transistor model "NFET" uses the built-in model NFET to specify the process and technology related parameters of the MOSFET. Monte Carlo analysis analyzes the effects of errors due to electronic circuit parts. 5 V Power consumption 70 µW maximum at 3. Consequently, the gate signal distribution within a device looks and behaves very similar to a transmission line. Here is an equivalent model:. These are nearly identical, with a subtle VTO ("oh" not "zero") is the. Program will compute these parameters (except Lambda) if, instead of specifying them, you specify the process parameters Tox, Uo, Nsub, and Nss. This is the cutoff voltage, or VGS,off. MAIN APPLICATIONS AC static switching in appliance control systems Drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater. model line with the values obtained based on the results of the Experiment 1. 0 For the other supported MOSFET device models, many of the parameters that can be included in a linked model file are common to both Spice3f5 and PSpice. V G > V th. 01 Lambda = 0. Kp is the transconductance of the MOSFET. Then simulate your design in LTspice with DC. Use RDS (on), thermal, avalanche breakdown, and switching parameters to choose the right device. The EPFL-EKV MOSFET Model Equations for Simulation 2 MB/CL/CE/FT/FK EPFL-DE-LEG 29. V gs must be pulled below 0 V in order to cut off the channel. ov -I(Vds) 2. SPICE provides four MOSFET device models, which differ in the formulation of the I-V characteristic. dc vin 0 5 0. To turn on the MOSFET, we must provide a minimum Gate to Source voltage (Vgs Threshold voltage). (Build the Model) Use the PSpice model editing capabilities to create an NMOS model with the following parameters: level=1, lambda=0. If VTO is negative, then you have a depletion mode device. Program will compute these parameters (except Lambda) if, instead of specifying them, you specify the process parameters Tox, Uo, Nsub, and Nss. T Jurusan Teknik Elektro IST AKPRIND 2015 1. Then select 'EDIT MODEL INSTANCE (TEXT). 0 VGS 2 0 DC 0. Because cheap, suitable for use not over than 20-volts and 0. Add a new property Vto on PARAM by selecting it and doing right mouse click > Edit Property. 50 NMOS LEVEL=2 VTO=2. NNNN-PPPP 4 pairs, match NNNN and PPPP only: HK$800. Today's computers, CPUs and cell phones make use of CMOS due to several key advantages. 2) Parameters of level−1 MOSFET model are: VTO: Zero Bias Threshold Voltage LAMBDA: Channel Length Modulation KP. END netlist device SPICE model the simulator provides 8 MOSFET device models, which differ in the formulation of the I-V characteristic the. ec ≈ 5 × 104 V/cm for holes, hence velocity saturation for P-channel MOSFET will not become important until L < 0. Level 1 MOSFET model:. The discrete vertical double diffused MOSFET transistor(VDMOS) popularly used in board level switch mode power supplies has behavior that is qualitatively different than the above monolithic MOSFET models. There are two types of MOSFETs: n-channel and p-channel. From the PSpice results in Fig. Answer to Find IDQ and VDSQ for the circuit shown in Figure P12. 09 KOX=27 EOT=1. In power electronics, MOSFET transistors are the most usual. BSIM and EKV groups have agreed to collaborate on the long-term development and support of BSIM6 as a world-class open-source MOSFET SPICE model for the international community for years to come. MOSFET I-V characteristics: general consideration The current through the channel is V I R = where V is the DRAIN - SOURCE voltage Here, we are assuming that V << V T (we will see why, later on) The channel resistance, R (W is the device width): s LL R qn aW qn Wμμ ==-+ G Semiconductor The gate length L S D +-V V GS I=μW c i ×(V GS -V T. ©2007 Fairchild Semiconductor CorporationFDS8870 Rev. View Blog Entries. 005 +cgso=2. 64e-6 + NSUB=1E17 TOX=20n) where M1 is one specific transistor in the circuit, while the transistor model "NFET" uses the built-in model NFET to specify the process and technology related parameters of the MOSFET. PSPICE tutorial: MOSFETs! In this tutorial, we will examine MOSFETs using a simple DC circuit and a CMOS inverter with The MOSFET models that we will use are the the MbreakN3 and MbreakN4 devices for NMOS and the MbreakP3 and MbreakP4 models for PMOS. Then simulate your design in LTspice with DC. If iD is to be 12. In short channel MOSFETs, it is impossible to overcome this effect. 7, KP=110U, +LAMBDA=0. 5/Cox’ [ F] = (KT/q ) ln (NSUB/ni) where ni = 1. JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. 33” is broken down into a number of easy to follow steps, and 37 words. MOSFET capacitances). Using two points from the current-voltage charac-teristic, c and r can be calculated. Kp=50uA/V2. KARAKTERISTIK JFET & MOSFET Oleh Sigit Priyambodo, S. 077 Where can I find models for appropriate MOSFET as shown in diagrams which I *ZETEX ZVP2106A Mosfet Spice Subcircuit Last revision 3/86 *. 29 ld 4 2 4 5n. Free Energy for free independant people +VTO=3. The saturation condition is reached when the channel (inversion) charge at the drain end becomes equal to zero. 3 KP=9 IS=1e-30. If RG>>1Mohm, then Rsig can be neglected, and GV=-11. The gate (G) of the MOSFET plays a similar role to the base (B) of the BJT. VDsat: Note that VTO is an extracted parameter. model ModName xmos (para) (xmos is either NMOS or PMOS) Some key para are: Parameter Description Units Default VTO Zero-bias threshold voltage KP Transconductance parameter, μ C ox Amps/ E-5 GAMMA Bulk threshold parameter / PHI Surface potential. 8: MOSFET Simulation PSPICE simulation of NMOS 2. 2-2 Analog Devices Analog Devices This chapter describes the different types of analog devices supported by PSpice and PSpice A/D. 0415081 KP=45. 64p N=1 *The default W and L is 30 and 10 um respectively and AD and AS *should not be included. View Forum Posts. 09 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 17. 1u M1 1 4 9 9 myMOS1. on SiC MOSFET. 5 UO=800 TOX=500. The EKV MOSFET Model for Circuit Simulation October, 1998 the EKV MOSFET model structure VTO long-channel threshold voltage V0. * vtc for cmos inverter vin 2 0 dc 0v vdd 1 0 dc 5v mp 3 2 1 1 cmosp w=5u l=1u mn 3 2 0 0 cmosn w=2u l=1u. 4 V Low Input Capacitance: 35 pF Fast Switching Speed: 10 ns Low Input and Output Leakage. It is performed simultaneously with transient analysis, AC analysis, DC sweep analysis, etc. Procedures: 1. Navigating through Pspice: Basic Screen There are three windows that are opened. DA: 86 PA: 97 MOZ Rank: 39. 74LCX240MTCX TSOP14 FAIRCHILD ☆ 24 74LCX240MTCX parts available at SemiconductorCircuits. Enhancement Load NMOS. The model consistently describes effects on charges, transcapacitances, drain current and transconductances in all regions of operation, depending on five physical device parameters and bias conditions. 524 Rds=888. 3 Ω Ciss 2500 pF Coss VGS = 0 V, VDS = 0. For an NMOS FET, if VTO is positive, you have an enhancement mode device. Kp=50uA/V2. long time when i had tried more on how to extracting Kn from mosfet datasheet finally i found it; i datasheet look at gfs parameter with its details. JFET while others may be more applicable to the MOSFET, etc. Free essays, homework help, flashcards, research papers, book reports, term papers, history, science, politics. Good afternoon, I'm trying to learn how to use the optimizer advanced analysis in PSPICE for this propose, I sketch a tipical SC MOS amplifier using a MBREAKN mosfet transistor I edited the PSPICE model to included for example a different VT0, and my idea is For example use the OPTIMIZER to optimize this parameter but when I try to include this parameter in. 5 V, thus simulating replacing the transistor. To standardize on the SPICE simulations, I will use VTO = 2 volts for the NMOS and VTO = -2 volts for the PMOS; λ= 0. Joerg Guest. To illustrate amplification using a MOSFET 2. find the line which gives the value of Vto. Bahan Kuliah. Such a combination gives users the capability to have the proof of concept quickly in PSIM, and then zoom in to study a circuit in detail in SPICE. 20e-12, cjo = 1. model MC14007N NMOS LEVEL=3 W- -350u L=10u VTO= 1. MOSFET and this in turn reduces the severe velocity saturation effect observed in the submicron region. MOSFETs in PSPICE. The n-channel MOSFET is to be biased in the saturation region, at an operating point of desired drain current, drain voltage, and gate voltage. mosfet model spice/pspice. All other parameters of the MOSFETs are in the default values. 077 Where can I find models for appropriate MOSFET as shown in diagrams which I *ZETEX ZVP2106A Mosfet Spice Subcircuit Last revision 3/86 *. JFET (Junction FET) MOSFET (Metal Oxide Silikon FET) PMOS ( MOS saluran P) NMOS (MOS saluran N) Masih banyak lagi. 7 kp=110u +gamma=0. 8SABER Electrical ModelREV 19 July 1999template IRF540N n2,n1,n3electrical n2,n1,n3{var i iscld. the MOSFET is either in a lower or high resistive state (ON or OFF, respectively), a high source voltage can be converted to a lower output voltage very efficiently. The MOSFET has Vto = 1V and K = 0. 477 Lecture January 13, 2003 Why this lecture is important. lib from MOSIS. The input signal can swing to about a volt peak to peak before the circuit becomes problematic. 7 ) * analyses. The source code is compiled in Code Composer Studio. TH =VTO +GAMMA( 2PHI −V BS − 2PHI) Georgia Tech ECE 3040 - Dr. DC VDS 0 10 0. 3 members found this post helpful. Potential barrier is controlled by both VGS and VDS. AND9033 Description of the ONSemiconductor MOSFET Model Structure of MOSFET Model GS VTO IDS 0 (eq. If you connect the gate to the source (Vgs=0) it is turned off. The TPS2420 • 3. Check the datasheet to see how the switching times have been tested. DE375-102N12A RF Power MOSFET 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 1000 Vds in Volts Capacitance in p F. 5 UO=650 Rs=10). The current-voltage characteristics of a NMOS transistor are shown in Figure 1b. Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6 012 Microelectronic Devices and Circuits Spring 200…. Model Levels 1, 2, and 3 The DC characteristics of the first three model levels are defined by the parameters VTO, KP, LAMBDA, PHI, and GAMMA These are computed by Pspice if process. MOSfet label nd ng ns nb mname {args}. 1u M1 1 4 9 9 myMOS1. model JbreakN-X NJF BETA = 4. But I could not find where and how to start the design. The Vto's temperature coefficient is Ego = Silicon band gap at T 2Øf - 00K • dl/to/dT is usually in the range between 0. 7 VDS 1 0 DC 0. dc vds 0 5. MOSFET capacitances tend to limit the frequency response of circuits. 05e-3 TC2 = -5e-7). model IRF9610 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0. CIR - MOSFET drain characteristicsvGS 1 0 0VvDS 2 0 0VM 2 1 0 0 NMOSG. This is normally set as a model parameter in your transistor models - it's often called something like vto (e. Until now, LTspice has not modeled this region of operation well. Three level-1 MOSFET transistors are used to model the gain block for the full current range from the sub-threshold region through high current. This allows you to edit this property value on the schematic by double clicking on the property. Level 1 MOSFET model:. Abstract: n306a. The LEVEL parameter is used to select the appropriate MOSFET simulation model. These are referred to as levels 1, 2, 3 and 7. 76 otherwise the gain if smaller. It is an important scaling factor to maintain power efficiency. model dplcapmod = (cjo = 1. Thanks for contributing an answer to Electrical Engineering Stack Exchange! Please be sure to answer the question. ” it will be easier for you to choose which type of models you require for your needs. Notes: SIMetrix supports four types of MOSFET model specified in the model definition. Complementary MOSFET (CMOS) technology is widely used today to form circuits in numerous and varied applications. the polarity of the voltages (, , , as well as VFB, VTO and TCV) is reversed prior to computing the current for P-channel, which is given a negative sign. Two inverters with enhancement-type load device are shown in the figure. This parameter, which represents the onset of significant drain current flow, has been given several definitions , , , but it may be essentially understood as the gate voltage value at which the transition between weak and strong inversion takes place in the MOSFET channel. MOSFETs in PSPICE. Learning Objectives: 1. MOSFET capacitances). Procedures: 1. Devais Mikro Elektronika Pertemuan ke 2. The MOSFET has Vto = 1 V and K = 0. 2 SPICE MOS Model The SPICE MOSFET Model is defined in the netlist as. You need to know what to call the parameters you want to change.
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